Changes

* HEMT Timeline: The growth of technology

HEMT (High Electron Mobility Transistor) is a field effect device with hetero interface acting as a channel. The name High electron mobility has come from its high electron mobility nature which is a result of potential well near the hetero interface. HEMT<nowiki>’</nowiki>s mainly use III-V compound semiconductors as channel material. The main intention behind HEMT is to make use of the high mobility in logical applications instead of silicon. But later it was found that HEMT has very less noise figures which attracted communication sector and since it<nowiki>’</nowiki>s been used widely in the high frequency applications (radar, lte, satellites.Etc).