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Landscape report for HEMT

2,268 bytes added, 13:47, 16 September 2011
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==Table of Contents==
1[[Image:HEMT. jpg|right|thumb|370px|[http://www2.ece.ohio-state.edu/~roblin/ee832.html Basic Device structure of HEMT]]]* Introductionto HEMT or MODFET* High Electron Mobility Transistor: Operation and Functioning* Challenges in HEMT technology* Control Patents* Concept Table* Patent Classes: Relevant patents along with IPC/US classification* Search Query* Interactive taxonomy * IP trend in HEMT technology over the years* HEMT products present in the Market* Major Players in the technology** Key Companies** Country Wise Distribution* HEMT Timeline: The growth of technology
2. ==Abstract==HEMT (High Electron Mobility Transistor: Operation ) is a field effect device with hetero interface acting as a channel. The name High electron mobility has come from its high electron mobility nature which is a result of potential well near the hetero interface. HEMTs mainly use III-V compound semiconductors as channel material. The main intention behind HEMT is to make use of the high mobility in logical applications instead of silicon. But later it was found that HEMT has very less noise figures which attracted communication sector and Functioningsince it<nowiki>’</nowiki>s been used widely in the high frequency applications (radar, lte, satellites.Etc).
2The scaling of silicon is coming to its scaling limitations, researchers again looking back at HEMT as a possible replacement for silicon. The fabrication methods of HEMT<nowiki>’</nowiki>s have also been simplified since its invention. Now the industry predictions state that HEMT will take over convention silicon transistors by 2015. With the potential well as a channel HEMT could achieve frequencies above 1THZ at low power.1 Device Design
2Dolcera research focuses on finding the Relevant HEMT patents. The research also focuses on analyzing year wise patent activity, leading industry players and country wise patent activity. The research resulted in 6527 patents that are related to HEMT. The scope of our research covers more than 90 countries. The work also includes categorizing the obtained patents based on the relevant technology.2 Working Principle
2[[Image:HEMT-YearWise_Filing_Trend.3 Challenges in jpg|thumb|1052px|center|HEMThas got quite a lot of interest in the recent years which replicates in the year wise chart of patent publications]]
3=== Taxonomy for HEMT technology ===[[Image:HEMT_-_Taxonomy. Control Patentspng|thumb|1009px|center|An interactive taxonomy gives you the complete picture of HEMT technology at one glance]]
4. Concept Table==Like this report?==<p align="center"> '''Contact us for the complete report''' </p>
5. Patent Classes{| style="border:1px solid #AAA; background:#E9E9E9" align="center"|-6. Search Query! style="background:lightgrey" | Samir Raiyani|-7| '''Email''': [mailto:info@dolcera. Taxonomy 8com info@dolcera. Trend over yearscom]|-9. Some Products in the Market 10. Major Players 10.| '''Phone''': +1 Key Companies-650-425-6772|}10.2 Country Wise Distribution 11. HEMT Timeline<br><p align="center">'''Dolcera can also provide a comprehensive report customized to your needs'''</p>{|border="2" cellspacing=Abstract:"0" cellpadding="4" align="center" "HEMT (High Electron Mobility Transistor) is a field effect device with hetero interface acting as a channel|style="background:lightgrey" align = "center" colspan = "3"|'''[mailto:info@dolcera. The name High electron mobility has come from its high electron mobility nature which is a result of potential well near the hetero interface. HEMTcom <nowikispan style="color:#0047AB">Buy the customized report from Dolcera</nowikispan>s mainly use III]''' |-V compound semiconductors as channel material| align = "center"| [http://www. The main intention behind HEMT is to make use of the high mobility in logical applications instead of silicondolcera. But later it was found that HEMT has very less noise figures which attracted communication sector and since it<nowiki>’<com/nowiki>s been used widely in the high frequency applications (radar, lte, satelliteswebsite_prod/services/ip-patent-analytics-services Patent Analytics Services]|align = "center"| [http://www.Etc)dolcera.com/website_prod/services/business-research-services Market Research Services]|align = "center"| [http://www.dolcera.com/website_prod/tools/patent-dashboard Purchase Patent Dashboard]The scaling of silicon is coming to its scaling limitations, researchers again looking back at HEMT as a possible replacement for silicon|-|align = "center"| [http://www. The fabrication methods of HEMT<nowiki>’<dolcera.com/nowiki>s have also been simplified since its inventionwebsite_prod/services/ip-patent-analytics-services/patent-search/patent-landscapes Patent Landscape Services]|align = "center"| [http://www. Now the industry predictions state that HEMT will take over convention silicon transistors by 2015dolcera. With the potential well as a channel HEMT could achieve frequencies above 1THZ at low powercom/website_prod/research-processes Dolcera Processes]|align = "center"| [http://www.dolcera.com/website_prod/industries Industry Focus]|-Dolcera research focuses on finding the Relevant HEMT patents|align = "center"| [http://www. The research also focuses on analyzing year wise dolcera.com/website_prod/services/ip-patent activity, leading industry players and country wise -analytics-services/patent activity-search/patent-landscapes Patent Search Services]|align = "center"| [http://www. The research resulted in 6527 patents that are related to HEMTdolcera. The scope of our research covers more than 90 countriescom/website_prod/services/ip-patent-analytics-services/alerts-and-updates Patent Alerting Services]|align = "center"| [http://www. The work also includes categorizing the obtained patents based on the relevant technologydolcera.com/website_prod/tools Dolcera Tools]|-|}<br>
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