Landscape report for HEMT - Revision history

Shobhit.pareek: /* Abstract */

2011-09-16T13:47:45Z

‎Abstract

Shobhit.pareek: /* Abstract: */

2011-09-16T13:08:00Z

‎Abstract:

Shobhit.pareek at 13:07, 16 September 2011

2011-09-16T13:07:46Z

Shobhit.pareek: /* Like this report? */

2011-09-16T13:07:02Z

‎Like this report?

Shobhit.pareek at 13:06, 16 September 2011

2011-09-16T13:06:17Z

Shobhit.pareek at 12:59, 16 September 2011

2011-09-16T12:59:10Z

Shobhit.pareek at 12:07, 16 September 2011

2011-09-16T12:07:35Z

New page

==Table of Contents==
1. Introduction

2. High Electron Mobility Transistor: Operation and Functioning

2.1 Device Design

2.2 Working Principle

2.3 Challenges in HEMT

3. Control Patents

4. Concept Table

5. Patent Classes

6. Search Query

7. Taxonomy

8. Trend over years

9. Some Products in the Market

10. Major Players

10.1 Key Companies

10.2 Country Wise Distribution

11. HEMT Timeline

==Abstract:==
HEMT (High Electron Mobility Transistor) is a field effect device with hetero interface acting as a channel. The name High electron mobility has come from its high electron mobility nature which is a result of potential well near the hetero interface. HEMT<nowiki>’</nowiki>s mainly use III-V compound semiconductors as channel material. The main intention behind HEMT is to make use of the high mobility in logical applications instead of silicon. But later it was found that HEMT has very less noise figures which attracted communication sector and since it<nowiki>’</nowiki>s been used widely in the high frequency applications (radar, lte, satellites.Etc).

The scaling of silicon is coming to its scaling limitations, researchers again looking back at HEMT as a possible replacement for silicon. The fabrication methods of HEMT<nowiki>’</nowiki>s have also been simplified since its invention. Now the industry predictions state that HEMT will take over convention silicon transistors by 2015. With the potential well as a channel HEMT could achieve frequencies above 1THZ at low power.

Dolcera research focuses on finding the Relevant HEMT patents. The research also focuses on analyzing year wise patent activity, leading industry players and country wise patent activity. The research resulted in 6527 patents that are related to HEMT. The scope of our research covers more than 90 countries. The work also includes categorizing the obtained patents based on the relevant technology.

@@ Line 18: / Line 18: @@
 ==Abstract==
-HEMT (High Electron Mobility Transistor) is a field effect device with hetero interface acting as a channel. The name High electron mobility has come from its high electron mobility nature which is a result of potential well near the hetero interface. HEMT<nowiki>’</nowiki>s mainly use III-V compound semiconductors as channel material. The main intention behind HEMT is to make use of the high mobility in logical applications instead of silicon. But later it was found that HEMT has very less noise figures which attracted communication sector and since it<nowiki>’</nowiki>s been used widely in the high frequency applications (radar, lte, satellites.Etc).
+HEMT (High Electron Mobility Transistor) is a field effect device with hetero interface acting as a channel. The name High electron mobility has come from its high electron mobility nature which is a result of potential well near the hetero interface. HEMTs mainly use III-V compound semiconductors as channel material. The main intention behind HEMT is to make use of the high mobility in logical applications instead of silicon. But later it was found that HEMT has very less noise figures which attracted communication sector and since it<nowiki>’</nowiki>s been used widely in the high frequency applications (radar, lte, satellites.Etc).
 The scaling of silicon is coming to its scaling limitations, researchers again looking back at HEMT as a possible replacement for silicon. The fabrication methods of HEMT<nowiki>’</nowiki>s have also been simplified since its invention. Now the industry predictions state that HEMT will take over convention silicon transistors by 2015. With the potential well as a channel HEMT could achieve frequencies above 1THZ at low power.

@@ Line 17: / Line 17: @@
 * HEMT Timeline: The growth of technology
-==Abstract:==
+==Abstract==
 HEMT (High Electron Mobility Transistor) is a field effect device with hetero interface acting as a channel. The name High electron mobility has come from its high electron mobility nature which is a result of potential well near the hetero interface. HEMT<nowiki>’</nowiki>s mainly use III-V compound semiconductors as channel material. The main intention behind HEMT is to make use of the high mobility in logical applications instead of silicon. But later it was found that HEMT has very less noise figures which attracted communication sector and since it<nowiki>’</nowiki>s been used widely in the high frequency applications (radar, lte, satellites.Etc).

← Older revision		Revision as of 13:07, 16 September 2011
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		+	__NOTOC__
	==Table of Contents==		==Table of Contents==
	[[Image:HEMT.jpg\|right\|thumb\|370px\|[http://www2.ece.ohio-state.edu/~roblin/ee832.html Basic Device structure of HEMT]]]		[[Image:HEMT.jpg\|right\|thumb\|370px\|[http://www2.ece.ohio-state.edu/~roblin/ee832.html Basic Device structure of HEMT]]]

@@ Line 29: / Line 29: @@
 ==Like this report?==
-<p align="center"> '''Contact us for the complete report''' </p><br>
+<p align="center"> '''Contact us for the complete report''' </p>
 {| style="border:1px solid #AAA; background:#E9E9E9" align="center"
@@ Line 39: / Line 39: @@
 | '''Phone''': +1-650-425-6772
 |}
+<br>
-<p align="center">'''Dolcera can also provide a comprehensive report customized to your needs'''</p><br>
+<p align="center">'''Dolcera can also provide a comprehensive report customized to your needs'''</p>
 {|border="2" cellspacing="0" cellpadding="4" align="center" "
 |style="background:lightgrey" align = "center"  colspan = "3"|'''[mailto:info@dolcera.com <span style="color:#0047AB">Buy the customized report from Dolcera</span>]'''

← Older revision		Revision as of 13:06, 16 September 2011
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	=== Taxonomy for HEMT technology ===		=== Taxonomy for HEMT technology ===
	[[Image:HEMT_-_Taxonomy.png\|thumb\|1009px\|center\|An interactive taxonomy gives you the complete picture of HEMT technology at one glance]]		[[Image:HEMT_-_Taxonomy.png\|thumb\|1009px\|center\|An interactive taxonomy gives you the complete picture of HEMT technology at one glance]]
		+
		+	==Like this report?==
		+	<p align="center"> '''Contact us for the complete report''' </p><br>
		+
		+	{\| style="border:1px solid #AAA; background:#E9E9E9" align="center"
		+	\|-
		+	! style="background:lightgrey" \| Samir Raiyani
		+	\|-
		+	\| '''Email''': [mailto:info@dolcera.com info@dolcera.com]
		+	\|-
		+	\| '''Phone''': +1-650-425-6772
		+	\|}
		+
		+	<p align="center">'''Dolcera can also provide a comprehensive report customized to your needs'''</p><br>
		+	{\|border="2" cellspacing="0" cellpadding="4" align="center" "
		+	\|style="background:lightgrey" align = "center" colspan = "3"\|'''[mailto:info@dolcera.com <span style="color:#0047AB">Buy the customized report from Dolcera</span>]'''
		+	\|-
		+	\| align = "center"\| [http://www.dolcera.com/website_prod/services/ip-patent-analytics-services Patent Analytics Services]
		+	\|align = "center"\| [http://www.dolcera.com/website_prod/services/business-research-services Market Research Services]
		+	\|align = "center"\| [http://www.dolcera.com/website_prod/tools/patent-dashboard Purchase Patent Dashboard]
		+	\|-
		+	\|align = "center"\| [http://www.dolcera.com/website_prod/services/ip-patent-analytics-services/patent-search/patent-landscapes Patent Landscape Services]
		+	\|align = "center"\| [http://www.dolcera.com/website_prod/research-processes Dolcera Processes]
		+	\|align = "center"\| [http://www.dolcera.com/website_prod/industries Industry Focus]
		+	\|-
		+	\|align = "center"\| [http://www.dolcera.com/website_prod/services/ip-patent-analytics-services/patent-search/patent-landscapes Patent Search Services]
		+	\|align = "center"\| [http://www.dolcera.com/website_prod/services/ip-patent-analytics-services/alerts-and-updates Patent Alerting Services]
		+	\|align = "center"\| [http://www.dolcera.com/website_prod/tools Dolcera Tools]
		+	\|-
		+	\|}
		+	<br>

@@ Line 1: / Line 1: @@
 ==Table of Contents==
-. Introduction
+[[Image:HEMT.jpg|right|thumb|370px|[http://www2.ece.ohio-state.edu/~roblin/ee832.html Basic Device structure of HEMT]]]
+* Introduction to HEMT or MODFET
-. High Electron Mobility Transistor: Operation and Functioning
+* High Electron Mobility Transistor: Operation and Functioning
+* Challenges in HEMT technology
-.1 Device Design
+* Control Patents
+* Concept Table
-.2 Working Principle
+* Patent Classes: Relevant patents along with IPC/US classification
+* Search Query
-.3 Challenges in HEMT
+* Interactive taxonomy
+* IP trend in HEMT technology over the years
-. Control Patents
+* HEMT products present in the Market
+* Major Players in the technology
-. Concept Table
+** Key Companies
+** Country Wise Distribution
-. Patent Classes
+* HEMT Timeline: The growth of technology
-−
-. Search Query
-−
-. Taxonomy
-−
-. Trend over years
-−
-. Some Products in the Market
-−
-. Major Players
-−
-.1 Key Companies
-−
-.2 Country Wise Distribution
-−
-. HEMT Timeline
 ==Abstract:==
@@ Line 38: / Line 22: @@
 Dolcera research focuses on finding the Relevant HEMT patents. The research also focuses on analyzing year wise patent activity, leading industry players and country wise patent activity. The research resulted in 6527 patents that are related to HEMT. The scope of our research covers more than 90 countries. The work also includes categorizing the obtained patents based on the relevant technology.